ot_flash: Mark flash memory as dirty when written
#246
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rivos-eblot
requested changes
Oct 17, 2025
rivos-eblot
requested changes
Oct 17, 2025
On program/erase operations, mark the corresponding part of the MemoryRegion as dirty so that the TCG knows to invalidate any existing TLB pages when performing XIP execution from flash. The TLB should be flushed on changes to the EPMP CSRs, meaning that this only really impacts the case where you execute some code (causing it to be cached in the TLB), then write over that code, and then execute the new code from the same location. This kind of self-modifying code could be possible in owner code which performs relevant firmware updates without resetting, for example. Also fix a frequent misuse of an unsigned int constant in memsets. Signed-off-by: Alex Jones <[email protected]>
jwnrt
approved these changes
Oct 20, 2025
rivos-eblot
approved these changes
Oct 21, 2025
No worries, this was not urgent for me, just a small fix that I noticed while going through the code :) |
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On program/erase operations, mark the corresponding part of the MemoryRegion as dirty so that the TCG knows to invalidate any existing TLB pages when performing execution-in-place from flash.
The TLB should be flushed on changes to the EPMP CSRs, meaning that this only really impacts the case where you execute some code (causing it to be cached in the TLB), then write over that code, and then execute the new code from the same location. This kind of self-modifying code could be possible in owner code which performs relevant firmware updates without resetting, for example.