v1.1.1 Release - Visual Studio Compatibility

Source code is now able to be compiled using Visual Studio, and the example doping profile has been updated.

Improvements to code base:
All variable length arrays are now processed using new and delete.
Casting has been made clearer and unused variables have been removed.
Readability has been improved.

User Inputs:
doping_profile.txt updated to reflect previous update to electric field solver.

v1.1.0 Release - Electric Field Upgrade

Updated Electric Field Profiler.

Electric field profiler upgraded to fix issue with many N-type doping regions.

Electric field profiler now finds the P-N junction, then steps backwards until the electric field profile of the required voltage has been created. This is rather than assuming that depletion starts from the boundary between the first and second region.

Important Change
P-Type regions must now be specified first rather than N-Type regions.

v1.0.1 Release

Update to Device Properties Class.

Device properties class now records user input parameters in a text file user_inputs.txt.

Simple Monte Carlo Simulator

Main release of the Simple Monte Carlo Simulator v1.0.0

Software Capabilities

There are three main modes within the software with different capabilities.
The three modes are "Diode Properties", "Drift Velocity" & "Impact Ionization Coefficients"

Diode Properties Mode:
Can produce the following characteristics of an input APD or SPAD structure.

• Avalanche Gain/Multiplication Factor
• Excess Noise Factor
• Breakdown Probability
• Mean Time to Breakdown

Drift Velocity Mode:
Can produce the following characteristics of a simulated material.

• Electron Drift Velocity
• Hole Drift Velocity

Impact Ionization Mode:
Can produce the following characteristics of a simulated material.

• Electron Impact Ionization Coefficients (Alpha)
• Hole Impact Ionization Coefficients (Beta)

Material Capabilities

Currently Simple Monte Carlo parameter sets have been implimented for the following materials:
-Silicon
-Gallium Arsenide
-Indium Gallium Phosphide